HYS64V16220GU
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
Infineon-HYS64V16220GU.pdf
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—— 芯片百科 ——
描述
3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module
3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module
168 pin unbuffered DIMM ModulesThe HYS 64(72)8200 and HYS 64(72)16220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organized as 8M × 64, 8M × 72 in 1 bank and 16M × 64 and 16M × 72 in two banks high speed memory arrays designed with 64M Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 and -8B speed sort 8M 8 SDRAM devices in TSOP-54 packages to meet the PC100 requirement. Modules which use -10 parts are suitable for PC66 applications only. Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s PC SDRAM Rev. 1.0 module specification.• 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
• 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization
• Optimized for byte-write non-parity or ECC applications
• JEDEC standard Synchronous DRAMs (SDRAM)
• Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
• Single + 3.3 V (± 0.3 V ) power supply
• Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
• Auto Refresh (CBR) and Self Refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs are LVTTL compatible
• Serial Presence Detect with E2PROM
• Utilizes 8M × 8 SDRAMs in TSOPII-54 packages
• 4096 refresh cycles every 64 ms
• 133.35 mm × 31.75 mm × 4.00 mm card size with gold contact pads
特性
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HYS64V16220GU
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